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| 4AK21 Silicon N-Channel Power MOS FET Array Application High speed power switching Features * Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 A R DS(on) 0.12 , VGS = 4 V, I D = 4 A * Capable of 4 V gate drive * Low drive current * High speed switching * High density mounting * Suitable for motor driver, solenoid driver and lamp driver * Discrete packaged devices of same die: 2SK1302, 2SK1307 4AK21 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain Absolute Maximum Ratings (Ta = 25C) (1 Unit) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. 4 devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25C)* Pch* Tch Tstg 2 2 1 Rating 100 20 8 32 8 28 4 150 -55 to +150 Unit V V A A A W W C C 2 4AK21 Electrical Characteristics (Ta = 25C) (1 Unit) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 100 20 -- -- 1.0 -- -- |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 6.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.07 0.09 10.0 1300 540 160 12 60 320 120 1.0 200 Max -- -- 10 250 2.0 0.09 0.125 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 8 A, VGS = 0 I F = 8 A, VGS = 0 dIF/dt = 50 A/s I D = 4 A, VGS = 10 V, RL = 7.5 Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V*1 I D = 4 A, VGS = 4 V*1 I D = 4 A, VDS = 10 V*1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test VGS(off) RDS(on) See characteristic curves of 2SK1302 3 4AK21 Maximum Channel Dissipation Curve 6 Channel Dissipation Pch (W) 5 4 3 2 1 Channel Dissipation Pch (W) Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 30 Maximum Channel Dissipation Curve Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 20 2 Device Operation 1 Device Operation 10 0 25 50 75 100 125 Ambient Temperature Ta (C) 150 0 25 50 75 100 125 Case Temperature TC (C) 150 Maximum Safe Operation Area 50 re 10 s a 20 O is per lim at ite ion d in by th Ri 10 sa Drain Current ID (A) DS 10 5 2 1 0.5 0.2 0.1 PW n) 0 (o s = 1 m s s m 10 Ta = 25C 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain to Source Voltage VDS (V) D C O pe ra tio n = (T C (1 Sh ot ) 25 C ) 4 Unit: mm 26.5 0.3 4.0 0.2 10.0 0.3 2.5 1.82 2.54 1.4 0.55 0.1 10.5 0.5 1.5 0.2 0.55 -0.06 +0.1 1 2 3 4 5 6 7 8 9 10 Hitachi Code JEDEC EIAJ Weight (reference value) SP-10 -- -- 2.9 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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